silicon photo transistor 1. structure 1.1 chip size : 0.50mm x 0.50mm 1.2 chip thickness : 180 20um 1.3 metallization : top - al, bottom - cr-au 1.4 passivation : silicon nitride 1.5 bonding pad size - emitter : 120 x 120um - base : 60um x 60um 2. electrical characteristics (ta=25 ) symbol min typ max unit bv ceo 30 v bv cbo 30 v bv ebo 5v bv eco 5v i ceo 100 na v ces 300 mv h fe 200 - 3. maximum ratings (ta=25 ) symbol rating unit v cbo 30 v v ceo 30 v v ebo 5v ic 100 ma t j 150 t stg -55 to+15 0 eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr i ce =10ua auk corp. collector current c-e saturation voltage e-b breakdown voltage c-b breakdown voltage parameter i c =2ma, i b =100ua v ce =20v i ec =10ua i cb =10ua collector-base voltage OPB0505P i ce =100ua condition parameter c-e breakdown voltage e-c breakdown voltage collector cut-off curren t v ce =5v, ic=2ma storage temperature dc current gain collector-emitter voltag e emitter-base voltage junction temperature
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